230.5160相关论文
Realization of quantum efficiency enhanced PIN photodetector by assembling resonant waveguide gratin
We demonstrate an InP/InGaAs PIN photodetector with enhanced quantum efficiency by assembling silicon resonant waveguide......
Methods for enhancing optical heterodyne beat SNR in absolute frequency measurement using optical fr
The signal-to-noise ratio (SNR) of the optical heterodyne beat between a low-power laser and an optical frequency comb w......
GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substr
We study the performance of GaN-based p–i–n ultraviolet (UV) photodetectors (PDs) with a 60 nm thin p-type contact lay......
The passively quenched operation of avalanche photodiode (APD) has been used to characterizing InGaAs/InP APD including ......
Short-wave infrared (SWIR) detectors combining AlAs/In0.53...
In ring laser gyros (RLGs), dynamic lock-in, which results from information loss in the lock-in region, occurs when a co......
Resonant cavity enhancement (RCE) typed optical detector and modulator which operating at wavelength band of 1.06 μm is......
Lock-in phenomenon in ring laser gyroscopes is directly related to effective backscattering, which includes both backsca......
AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperat
Unintentionally doped AlGaN thin films are grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor de......
A lateral photovoltaic effect (LPE) is discovered in an LaTiO3 ...
Ultraviolet (UV) detectors with large photosensitive areas are more advantageous in low-level UV detection applications.......
An ultra-compact hybrid-integration receiver optical subassembly (ROSA) with four channels is demonstrated in our labora......